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Fan Chen

Biography

Enrollment Date: 2007

Graduation Date:2010

Degree:M.S.

Defense Date:2010.06.04

Advisors:Baoyong Chi

Department:Institute of Microelectronics,Tsinghua University

Title of Dissertation/Thesis:Research on Key Circuits of Short-Distance Wireless Transmitter

Abstract:
In the last few decades, the great development of wireless communication technology, together with the rising cut-off frequency of CMOS made it possible to realize radio frequency transceiver in CMOS process. The thesis researches on some key issues on CMOS transceiver circuits for short-distance wireless communication applications. The low power and high data rate ASK and FSK transceiver implemented in UMC 0.18μm CMOS, aimed to be used in the portable device of the wireless endoscopy system, is proposed in the first part of this thesis. The IF carrier of ASK method is 10MHz and 2MHz/4MHz of FSK method. All the carriers with different frequencies are generated through the frequency division operation on the chip. Reference current and voltage are provided by a bandgap on the chip. The overall layout area is 0.8mm×0.5mm. The chip works with a 1.8V power supply and the amplitude of IF modulated signal can achieve 75mV. Some key modules used in the RF transceiver frontend of a multi-mode multi-band configurable wireless transceiver are presented in the second part of this thesis. In order to be used in a various short-distance wireless communication applications, three RF frontend working in 400MHz, 900MHz and 2400MHz are all integrated on the SOC chip together with a configurable frequency synthesizer and analog IF circuits. The digital baseband can support multiple modulation and demodulation schemes and a 3MHz data rate at most. The transceiver consists of a DAC, IF filter, mixer and power amplifiers. The design of quadrature direct up-converter, RF active balun and 2.4GHz power amplifier are proposed in the thesis. The power amplifier (PA) has digitally programmable output power levels (-5.5dBm/3.7dBm/10.3dBm etc) and works with a 3.3V power supply, while other parts work at 1.8V power supply. Its maximum out power to 50Ω load achieves 10.3 dBm.