Title：Reference voltage drive circuit

Country：China

Patent No.：201710326104.5

Legal Status：Authorized

Inventor：Fule Li, Jia Liu, Wen Jia, Zhihua Wang

Assignee：Research Institute of Tsinghua University in Shenzhen

Address：Room A302, Research Institute of Tsinghua University in Shenzhen, the Southern District of the High-tech Industrial Park, Nanshan District, Shenzhen 518057, Guangdong

Filing Date：2017-05-10

Issue Date：2020-03-24

The application provides a reference voltage drive circuit which is characterized in that the reference voltage drive circuit comprises a negative feedback circuit and a drive branch; the negative feedback circuit comprises first and a second difference operation amplifiers, first and second level shift circuits and a replication branch; the replication branch is arranged such that the ratio of the current flowing through the replication branch to the current flowing through the drive branch is 1:K; the drive branch receives the first and second bias voltages provided by the feedback circuit and outputs the first and second driving voltages. The reference voltage drive circuit can realize a wide output voltage range through the first and second level shift circuits; the drive branch uses an NMOS transistor and a PMOS to form an output of the push-pull stage, thereby increasing the settling speed of the driving voltage.

Patent Certificate： PDF/Jpg