题目/Title：A 0.03-3GHz Inductorless Wideband Low Noise Amplifier in 65nm CMOS

作者/Author：
                        Huan Deng,Haigang Feng,Ning Zhang

会议/Conference：ICET 2020

地点/Location：Chengdu, China

年份/Issue Date：2020.8-12 May

页码/pages：pp. 79 - 82

摘要/Abstract：
An inductorless wideband Low Noise Amplifier (LNA) supporting multiple wireless communication standards from 0.03GHz to 3GHz is presented in this paper. It adopts common gate structure to achieve such wide input matching range. Capacitor Cross Coupling (CCC) technique and Multiple Gated Transistors (MGTR) technique are introduced for noise and linearity improvement, respectively. This wideband LNA is fabricated in TSMC 65nm CMOS process, occupying 0.095mm2. The post-layout simulation results achieve a maximum gain of 11.6dB and a minimum noise figure (NF) of 2.7dB. The LNA consumes 5.7mW under 1.2V supply.