题目/Title：Gate-leakage compensation scheme for programmable SI-DAC of ΣΔ modulator in deep sub-micron

作者/Author：续阳,池保勇,王志华
                        Yang Xu,Baoyong Chi,Zhihua Wang

期刊/Journal：Analog Integrated Circuits and Signal Processing

年份/Issue Date：2013July

卷（期）及页码/Volume（No.）&pages：Vol.76, No.1, pp. 155 - 160

摘要/Abstract：
A gate-leakage compensation scheme is proposed to solve the gate-leakage current issue caused by large-size current-source transistors in multi-bit switchedcurrent(SI) DACs of the continuous-time RD modulator in deep sub-micron process without extra power consumption. To cover wide current range due to variable coefficients in different modes, the programmable SI-DAC architecture with 2-bit digital controlled unit cells is proposed. Implemented in 65 nm CMOS, the simulated results verify that the proposed scheme solves the gate-leakage issue and the modulator achieves tremendously high performance of 84.5 dB SQNDR and 94.6 dB SFDR with almost 14 and 19 dB improvement in SQNDR and SFDR, respectively.