题目/Title：A Nanopower CMOS Bandgap Reference with 30ppm/degree C from -30 degree C to 150 degree C

作者/Author：
                        Pengpeng Yuan,Zhihua Wang,Dongmei Li,A. Wang,Liyuan Liu

会议/Conference：ISCAS 2011

地点/Location：Rio de Janeiro, Brazil

年份/Issue Date：2011.15-18 May

页码/pages：pp. 2285 - 2288

摘要/Abstract：
A nanopower subthreshold bandgap reference with 30ppm/℃ from -30℃ to 150℃ has been implemented in 0.18m CMOS. This design is based on weighted VGS and is free of resistors. The temperature range is extremely wide with nanopower consumption. To achieve high performance of subthreshold bandgap operating in high temperature, a leakage current eliminating technique which enables subthreshold bandgap operate properly until 150℃ was proposed. Such modification does not require additional die area and power consumption. This topology can also generate multiple reference voltages whose values are integer times of the minimum reference voltage. The line regulation of the reference voltage is 0.75mV/V when the supply voltage is increased from 1 V to 2.5 V. The core circuit consumes 46nW at 1V at room temperature. The active area occupies 0.0036mm2.