题目/Title：New Implementation of High Linear LNA Using Derivative Superposition method

作者/Author：
                        Shuguang Han,Baoyong Chi,Zhihua Wang

期刊/Journal：Microelectronics Journal

年份/Issue Date：2009Jan.

卷（期）及页码/Volume（No.）&pages：Vol.40, No.1, pp. 197 - 201

摘要/Abstract：
New implementation of a high linear low-noise amplifier (LNA) using the improved derivative superposition (DS) method is proposed. The input stage is formed by two transistors connected in parallel. One transistor is biased in the strong inversion region as usual and another one is biased in the moderate inversion region instead of the weak inversion region, thus allowing a feasible source degeneration inductance at the sources of the two transistors to achieve a good input impedance matching and low noise figure (NF) while keeping high third-order input intercept point (IIP3) improvement with the DS method. The new implementation has been used in a 0.18-@mm CMOS high linear LNA. The measured results show that the LNA achieves +11.92dBm IIP3 with 9.36dB gain, 2.25dB NF and 7.5mA at 1.8V power consumption.