题目/Title：RF characterization of ESD protection structures

作者/Author：
                        Guang Chen,Haigang Feng,Haolu Xie,Rouying Zhan,Qiong Wu,Xiaokang Guan,Albert Wang,Kaoru Takasuka,Satoru Tamura, Zhihua Wang, Chun Zhang

会议/Conference：RFIC 2004

地点/Location：Forth Worth, TX, USA

年份/Issue Date：2004.6-8 June

页码/pages：pp. 379 - 382

摘要/Abstract：
ESD (electrostatic discharge) protection design for RF ICs is a challenging design problem. This paper reports a comprehensive RF characterization of various RF ESD protection structures, including S-parameters, parasitic capacitance and resistance. It is found that a dual-direction SCR type ESD protection structure is the best RF ESD protection solution and an optimized two/three-diode string is an attractive solution as well. A new optimization parameter, F-factor, is introduced to evaluate the overall performance of RF ESD protection structures. A dual-SCR structure of 257 μm2 for 2 kV ESD protection features 43.2 fF parasitic capacitance at 2.4 GHz and F=180. This work is conducted using a commercial 0.35 μm BiCMOS technology.