Title：Deep brain stimulation electrode device

Country：China

Patent No.：202010287006.7

Legal Status：Under review

Inventor：Songping Mai, Duo Guo, Muqun Yang, Tian Guan, Chun Zhang, Zhihua Wang

Assignee：International Graduate School at Shenzhen, Tsinghua University

Address：Tsinghua Campus, Xili University Town, Nanshan District, Shenzhen City 518055, Guangdong Province

Filing Date：2020-04-13

Issue Date：

The invention relates to a deep brain stimulation electrode device which comprises a first electrode, a second electrode, a fixing sleeve and circuit connecting parts, wherein each of first electrodeand the second electrode comprises an electrode implantation part and an electrode fixing part; the electrode implantation part is used for being implanted into a specific target point of the brain; the electrode fixing part is fixedly arranged in the fixing sleeve, and the electrode fixing part and the fixing sleeve are insulated and isolated from each other; the fixing sleeve is arranged so as to be fixed to a position of a skull punching point; the first electrode and the second electrode are fixed to a preset position in the brain through the fixing sleeve; and the first electrode and thesecond electrode introduce electrical stimulation signals through the circuit connecting parts. Through the deep brain stimulation electrode device, electrical stimulation on the target point can be reliably and precisely realized through a dual-channel combined effect; the precise electrical stimulation on a predetermined brain area is achieved; the injury on the brain area is extremely little; the deep brain stimulation electrode device can be used for effectively and safely treating drug addiction; and the influence on free activities of a brain stimulation object by the structure is small.The deep brain stimulation electrode device has the advantages that the implementation of a manufacturing mode is simple; the cost is low; and the mass production is easily realized.

Patent Certificate： PDF/Jpg