Title：A high speed CMOS transmission gate switch circuit
Country：China
Patent No.：201711453695.9
Legal Status：Authorized
Inventor：Fule Li，Jia Liu
Assignee：Tsinghua University
Address：Tsinghua University,Haidian District Beijing 100084, China
Filing Date：2017-12-28
Issue Date：2021-05-07
Abstract：
The invention provides a high-speed CMOS (Complementary Metal Oxide Semiconductor) transmission gate switch circuit, belonging to the technical field of transmission gate circuit design. The switch circuit comprises a CMOS transmission gate composed of an NMOS (N-type Metal Oxide Semiconductor) transistor and a PMOS (P-type Metal Oxide Semiconductor) transistor that are complementary, and a clockcontrol circuit composed of two sub-channels and having a level shifting function; the first sub-channel is used for generating an in-phase clock control signal for integrally shifting the level of aninput clock signal up, and the output end of the first sub-channel is connected to a gate of the NMOS transistor; the second sub-channel is used for generating an inverted clock control signal for integrally shifting the level of the input clock signal down, and the second sub-channel output is connected to a gate of the PMOS transistor. When the switch circuit is turned on, the overdrive voltageof the NMOS and PMOS transistors is increased, the on-resistance is reduced, the signal transmission speed is improved, and the nonlinear problem of the on-resistance changing with the change of input is reduced at the same time, so that the switch circuit can be applied to a circuit system having high speed and high precision requirements.
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