Title：Preparation process of superconductive Josephson junction covered by edge of in-situ three-layer film
Country：China
Patent No.：201510125770.3
Legal Status：Authorized
Inventor：Hao Li, Qichun Liu, Jianshe Liu, Tiefu Li, Wei Chen
Assignee：Tsinghua University
Address：Tsinghua University,Haidian District Beijing 100087, China
Filing Date：2015-03-20
Issue Date：2017-03-29
Abstract：
The invention discloses a preparation process of a superconductive Josephson junction covered by the edge of an in-situ three-layer film. A process flow consists of three parts including an in-situ growth three-layer film, a growing wire layer, and a photo-etching and etching defined junction area, wherein the specific steps and details of an Nb (Niobium) Josephson junction and an Al (Aluminum) Josephson junction are different, and finally the Nb Josephson junction without the protection of silicon dioxide and Al or the Al Josephson junction without surplus electrodes or surplus insulating layers can be obtained. The preparation process provided by the invention has the characteristics of being simple in structure, high in quality, large-scale to produce and the like.
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