Title：A driving circuit of reference voltage

Country：China

Patent No.：201210362016.8

Legal Status：Authorized

Inventor：Fule Li, Weitao Li, Changyi Yang, Zhihua Wang

Assignee：Tsinghua University

Address：Institute of Microelectronics,Tsinghua Univ. Beijing,10084

Filing Date：2012-09-25

Issue Date：2016-07-20

The invention discloses a driving circuit of a reference voltage, can achieve better PSRR, improve the speed of establishment of the reference voltage to reduce the power consumption of the circuit. Driving circuit of reference voltage is the embodiment of the present invention includes a closed loop negative feedback loop and open loop branches, open loop branches including NMOS tubes (M31) and NMOS tube (M32) (M31); NMOS tube drain connected to the power supply VDD, NMOS tube (M31) a first bias voltage closed loop negative gate access the feedback loop provides, NMOS tube (M31) of the source output reference voltage Vrp; NMOS tube drain (M32) and NMOS tube (M31) source electrode is connected, NMOS tube (M32) gate access loop negative feedback second bias voltage loop provides, NMOS tube (M32). The source by isolating the electrical grounding, NMOS tube (M32) of the source output reference voltage Vrn.

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