Title：A dual-port SRAM unit 6T structure with separate reading and writing
Country：China
Patent No.：201110282766.X
Legal Status：Authorized
Inventor：Huamin Cao, Ming Liu, Hong Chen, Xiang Zheng, Cong Wang, Zhihua Wang, Zhiqiang Gao
Assignee：Tsinghua University
Address：Mailbox No. 82, Beijing 100084
Filing Date：2011-09-21
Issue Date：2013-12-04
Abstract：
A dual-port SRAM cell with separate read and write structures 6T, the latch circuit is formed by two inverters coupled to each other and connected between the cell and the cell voltage, the first inverter includes a first pull-up transistor, a first pull-down transistor, a second inverter includes a second pull-up transistor, a second pull-down transistors, two pull-up transistor means connected to a voltage source, a gate connected to the other output of the inverter, two pull-down transistors means connected to the source electrode, the drain connected to the other output of the inverter gate, a drain and a first pull-up transistor is connected to a first pull-down transistor, a first storage node, a drain of the second pull-up transistor and a second connected to the drain of pull-down transistor, a second storage node, the transfer transistor are respectively connected a first storage node, and a first bit line and the word line, the read transistor are connected to a second word line, a second bit line and the first storage node, the present invention achieves improved SNM, leakage is reduced, increasing the read current purposes.
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