题目/Title：CMOS LC VCO中交叉耦合MOS管的结构和特点
                        Structure and Feature of Cross-Coupled MOS FET in CMOS LC VCO

作者/Author：宁彦卿,王志华,陈弘毅
                        Yanqing Ning,Zhihua Wang,Hongyi Chen

期刊/Journal：半导体技术 Semiconductor Technology

年份/Issue Date：2007

卷（期）及页码/Volume（No.）&pages：Vol.32, No.7, pp. 21 - 25

摘要/Abstract：
在近年来的文献报道中，CMOS LC VCO中交叉耦合MOS管的电路结构变化多端。在不同的设计中，MOS管的类型、数目和连接方式有很多不同的结构。从其基本结构出发总结这些结构，就不同结构MOS管电路对振荡器性能做了简要分析。着重介绍了近年来在理论认识，低电压、低相位噪声和宽频率覆盖设计方面所做的努力。
MOS transistors made up various structures in the recent reported CMOS LC VCO designs with different types, numbers and topologies. The attempt to summarize and classify these structures was carried out to show the characteristic of each topology. The current progress in the knowledge of this type circuit and the modified topologies for the designs of the low voltage, low phase noise and broadband applications were illustrated.