题目/Title：
                        Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

作者/Author：李冬梅,王志华,皇甫丽英,勾秋静
                        Dongmei Li,Zhihua Wang,Liying Huangfu,Qiujing Gou

期刊/Journal：物理学报 Chinese Physics

年份/Issue Date：2007.Dec.

卷（期）及页码/Volume（No.）&pages：Vol.16, No.12, pp. 3760 - 3765

摘要/Abstract：

This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.