题目/Title：A -193.1dBc/Hz FOM 1.08mW Low Power 10GHz VCO in 22nm CMOS Technology
作者/Author：
Xiao Luo, Songping Mai, Xian Tang, Haigang Feng
会议/Conference：RFIT 2023
地点/Location：Cairns, Australia
年份/Issue Date：2023.14-16 Aug.
页码/pages：pp.17-19
摘要/Abstract：
This paper presents a 10GHz voltage-controlled oscillator (VCO) with low power consumption, implemented in 22nm CMOS technology. The VCO utilizes a transformer to achieve negative gm-boosting, which improves the phase noise and start-up conditions. By optimizing the impulse sensitivity function (ISF), the VCO achieves an after-layout simulated phase noise of -113.5 dBc/Hz at 1MHz offset, with a power consumption of only 1.08 mW at 0.6 V supply voltage. The figure of merit (FOM) is as low as -193.1 dBc/Hz.