题目/Title：A sub-1-V ultra-low power full CMOS bandgap reference woking in subthreshold region

作者/Author：
                        Qing Ding,Pengpeng Yuan,Dongmei Li,Zhihua Wang

会议/Conference：EDSSC 2014

地点/Location：Chengdu, China

年份/Issue Date：2014.18-20 Jun.

页码/pages：pp. 1 - 2

摘要/Abstract：
A sub-1-V nanopower full CMOS bandgap voltage reference is implemented in standard 0.18-μm CMOS process in this paper. The active area occupies only 0.0094mm2. Moreover, low voltage and low power operation is achieved by utilizing weighted difference of two gate-source voltages (ΔVGS) created by a n-MOSFET pair with different gate oxide thickness, three current branches topology and self-cascode structure. Measured results of 20 samples show that it works properly for the supply voltage (VDD) from 0.8V to 2.5V. The output reference voltage (VREF) is 564±30mV with standard deviation(σ) being 11.2mV and measured Temperature Coefficient (TC) at best is 8ppm/°C with 15 ppm/°C on average. When supplied by 1V, the power dissipation of proposed bandgap reference is 52nW at 27°C.