题目/Title：一个电压接近1V 10ppm/℃带曲率补偿的CMOS带隙基准源
                        A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation

作者/Author：幸新鹏,李冬梅,王志华
                        Xinpeng Xing,Dongmei Li,Zhihua Wang

期刊/Journal：半导体学报 Chinese Journal of Semiconductors

年份/Issue Date：2008

卷（期）及页码/Volume（No.）&pages：Vol.29, No.1, pp. 24 - 28

摘要/Abstract：
介绍了一个带曲率补偿的低电压带隙基准源.由于采用电流模结构,带隙基准源的最低电源电压为900mV.通过VEB线性化补偿技术,带隙基准源在0到150℃的温度范围内的温度系数为10ppm/℃.在电源电压为1.1V时,电源电流为43μA,低频的PSRR为55dB.该带隙基准源已通过UMC 0.18μm混合信号工艺验证,芯片面积为0.186mm2.
A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppm/℃ from 0 to 150℃. With a 1.1V supply voltage, the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0.186mm2 of chip area.