题目/Title：NMOS晶体管高剂量率下总剂量辐照特性研究
                        Total Dose Effects with High Dose Rate in NMOS Transistors

作者/Author：李冬梅,王志华,皇甫丽英,勾秋静,雷有华,李国林
                        Dongmei Li,Zhihua Wang,Liying Huangfu,Qiujing Gou,Youhua Lei,Guolin Li

期刊/Journal：电子器件 Chinese Journal of Electron Devices

年份/Issue Date：2007

卷（期）及页码/Volume（No.）&pages：Vol.30, No.3, pp. 748 - 751

摘要/Abstract：
采用商用标准0.6 μm体硅CMOS工艺设计了不同宽长比、不同沟道长度及不同版图结构的非加固型NMOS晶体管作为测试样品.经高剂量60Coγ射线的总剂量辐照实验,讨论其在不同栅源偏置电压下的总剂量辐照特性.研究表明NMOS总剂量效应对辐照时栅源偏置电压敏感;辐照引起阈值电压的漂移随W/L的变化不明显;沟道长度及版图结构对NMOS管辐照后的源漏极间泄漏电流的影响显著.
The test chips were designed and processed in a commercial 0. 6 μm standard CMOS/Bulk process. Device parameters were monitored before and after irradiation with about 9.5 kGy（Si）^60Co γ-rays. Comparisons of the effects with different device sizes and different layout structures were made. The effects of different biasing conditions during irradiation are discussed. The experiment results show that W/L does not change the threshold voltage shift after γ-ray irradiation. Channel length and layout structure enormously influence the leakage between source and drain induced by irradiation.