专利名称：Delay locked loop using hybrid FIR filtering technique and semiconductor memory device having the same
专利国别：美国
专利号：US8310886 B2
法律状态：授权
发明人：Woogeun Rhee, Xueyi Yu, Sung Cheol Shin, Zhihua Wang
申请人：Samsung Electronics Co., Ltd.; Tsinghua University
地址：
申请日期：2010-06-28
授权日期：2012-11-13
摘要：
Example embodiments are directed to a delay locked loop (DLL) circuit based on a hybrid finite impulse response (FIR) filtering technique, and a semiconductor memory device including the DLL circuit. The DLL circuit includes a frequency divider and a self-referenced multiphase generator (SRMG) and allows a Sigma-Delta (ΣΔ) modulator to operate at a low frequency without generating false lock and glitch noise.
专利证书：
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