题目/Title：A customized low static leakage near/sub-threshold standard cell library using thick-gate transistors

作者/Author：
                        Yue Yin,Songyao Tan,Peilin Yang,Hanjun Jiang,Zhihua Wang

会议/Conference：ICTA 2020

地点/Location：Nanjing, China

年份/Issue Date：2020.23-25 Nov.

页码/pages：pp.75-76

摘要/Abstract：
A full-customized standard cell library using thick-gate transistors in TSMC 65nm technology is proposed for low static power demand in long-term monitoring IoT systems. The transistors are working in near/sub-threshold region, and channel length are increased for drain-induced barrier lowering (DIBL) effect inhibition. The standard cell layout area is optimized using dynamic N-well (NW) height. Algorithms are proposed for automatically DRC violations fixing due to cancellation of fillers. The customized standard cell library stands out for >400x smaller leakage power consumption compared to commercial library.