题目/Title：A 180 GHz differential Colpitts VCO in 65 nm CMOS

作者/Author：孟祥雨,王志华,池保勇
                        Xiangyu Meng, Zhihua Wang,Baoyong Chi

期刊/Journal：Analog Integrated Circuits & Signal Processing

年份/Issue Date：2016February

卷（期）及页码/Volume（No.）&pages：Vol.86, No.1, pp. 25 - 31

摘要/Abstract：
A 180 GHz differential Colpitts VCO in 65 nm CMOS is presented. The choice and placement of the varactors are analyzed with the Y parameters looking into the oscillation loop. Based on this analysis, the varactors are placed close to the source terminal of the transistors to minimize their load effect on the oscillator. The VCO occupies 0.097 mm2 core die area and consumes 21.8 mW DC power from a 1.2 V power supply. The measured tuning range is from 174.9  to 178.9 GHz. The measured output power after calibrating out the measurement conversion loss is −13.15 dBm and the measured phase noise at 10 MHz offset is −94 dBc/Hz.