题目/Title：1V电源非线性补偿的高温度稳定性电压带隙基准源
                        A 1V MNC Bandgap Reference with High Temperature Stability

作者/Author：秦波,贾晨,陈志良,陈弘毅
                        Bo Qin,Chen Jia,Zhiliang Chen,Hongyi Chen

期刊/Journal：半导体学报 Chinese Journal of Semiconductors

年份/Issue Date：2006.Nov.

卷（期）及页码/Volume（No.）&pages：Vol.27, No.11, pp. 2035 - 2039

摘要/Abstract：
阐述了电源电压为1V的非线性补偿CMOS电压带隙基准源,该基准源具有很高的温度稳定性.基准源电路中运用了rail-to-rail运算放大器(OPA).根据测试结果,室温下的输出电压为351.9mV,当温度在15~100℃变化时,输出电压在351.5~352.0mV之间变化,温度系数约为16.7ppm/℃.电路的功耗为0.16mW,芯片面积是0.18mm2.
A 1V matched nonlinear correction(MNC) CMOS bandgap reference with high temperature stability is presented. A 1V operational amplifier (OPA) with rail-to-rail input signal swing is also applied in the reference circuit. According to the experimental results, the output voltage is 351.9mV at room temperature. It varies by only 0.5mV from the range of 15~100℃, and the temperature coefficient is 16.7ppm/℃. The power dissipation of the circuit is 0.16mW, and the area is 0.18mm2 .