题目/Title：A D-Band Joint Radar-Communication CMOS Transceiver

作者/Author：
                        Wei Deng, Zipeng Chen, Haikun Jia, Pingda Guan, Taikun Ma, Angxiao Yan, Shiyan Sun, Xiangrong Huang, Guopei Chen, Ruichang Ma. Shengnan Dong, Luqiang Duan, Zhihua Wang, Baoyong Chi

期刊/Journal：IEEE Journal of Solid-State Circuits

年份/Issue Date：2022Jun.

卷（期）及页码/Volume（No.）&pages：Vol.58, No.2, pp.411-427

A D -band joint radar-communication complementary metal–oxide–semiconductor (CMOS) transceiver featuring a dual-function mode multiplexer, a power-combining PA with high output power, a current choking high-gain mixer, a two-point modulation (TPM) frequency-modulated continuous-wave (FMCW) digital phase-locked loop (PLL) with a dual-core DCO, and a wideband I/Q local oscillator (LO) generator is implemented in 28-nm CMOS technology. In the radar mode, the RF front end demonstrates 46-GHz bandwidth (BW), and the on-chip PLL/LO generated FMCW chirp achieves a BW of 30 GHz and a slope of 30 GHz/ 50 μs . In the communication mode, the transceiver including the analog baseband realizes 20-GHz BW, and the image rejection ratio (IRR) is better than 40 dB. The measured transmitter (TX) saturated output power is 13 dBm, and the output 1-dB compression point (OP1dB) is 8.3 dBm. The measured typical PLL phase noise is −111.3 dBc/Hz at a 1-MHz offset from an 11.69-GHz carrier frequency. The TX-to-RX over-the-air (OTA) modulation–demodulation measurement with QPSK and 16-QAM signals shows the error vector magnitude (EVM) of −16.5 and −19.7 dB, respectively.