题目/Title：A Reconfigurable Dual-Mode CMOS Power Amplifier With Integrated T/R Switch for 0.1–1.5-GHz Multistandard Applications

作者/Author：
                        Yun Yin,Baoyong Chi,Zhaokang Xia,Zhihua Wang

期刊/Journal：IEEE Transactions on Circuits and Systems II: Express Briefs

年份/Issue Date：2014Jul.

卷（期）及页码/Volume（No.）&pages：Vol.61, No.7, pp. 471 - 475

摘要/Abstract：
A reconfigurable dual-mode power amplifier (PA) with an integrated transmit/receive (T/R) switch in 65-nm CMOS is presented. The PA can be reconfigured into linear mode or switching mode. In the linear mode, it achieves >19 dBm OP1 dB with >20% PAE over 0.1-1.5 GHz; in the switching mode, the maximum saturation output power of 23.2 dBm with the peak PAE of 60% is obtained. By utilizing the asymmetrical topology and stacked techniques, the T/R switch demonstrates ~0.5-dB TX insertion loss, >27-dB TX-RX isolation, and 24.8 dBm IP1 dB across 0.1-1.5 GHz. This brief proposes, for the first time, a CMOS dual-mode PA with an integrated T/R switch for multistandard applications.