题目/Title：142 GHz amplifier with 18.5 dB gain and 7.9 mW DC power in 65 nm CMOS

作者/Author：孟祥雨,池保勇,贾海坤,况立雪,王志华
                        Xiangyu Meng,Baoyong Chi,Haikun Jia,Lixue Kuang,Zhihua Wang

期刊/Journal：Electronics Letters

年份/Issue Date：2014Oct.

卷（期）及页码/Volume（No.）&pages：Vol.50, No.21, pp. 1513 - 1514

摘要/Abstract：
A single-ended amplifier with a magnetic-coupled feedback embedded network is proposed and its small-signal equivalent circuit is analysed in detail. The embedded network cancels the effects of the gate-drain capacitor Cgd and introduces negative resistance into the transistor drain, so that the maximum power gain of the transistor could be achieved. Based on this design methodology, a 142 GHz amplifier with 18.5 dB power gain and 7.9 mW DC power has been implemented in 65 nm CMOS.